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Presentation title: Status and Outlook of STT-MRAM Technology

来源: 河南大学纳米科学与材料工程学院    日期:2018-05-18   浏览次数:

Time: 17th February, 2017, 11:00-12:00 AM

Reporter: Tai Min (Xi'an Jiao Tong University)

Location: Conference room, 2nd floor of Key Laboratory for Special Functional Materials of Ministry of Education

   Min Tai got a bachelor’s degree from the Department of Physics of University of Science and Technology of China in 1985 and received his PhD diploma from Department of Electrical Engineering of University of Minnesota in 1993. He joined the College of Materials Science and Engineering of Xi'an Jiao Tong University.

Working experience:

   From 1993 to 2015, Min Tai worked as senior director in first-class international enterprise for 22 years and first successfully developed many new leading international products (IBM industry first AMR magnetic recording head products, the world's first spin valve magnetic recording head products) as a STT-MRAM specialist. He has successfully established and led the leading sub-20nm vertical STT-MRAM and sub-5nm Spintronics technology research and development in the IMEC industry (producing storage chips for the first time in the IMEC300mm test line, which was published as the first IMEC paper in 2014 about STT-MRAM IEDM);

   Min was also the manager of department and projects such as MRAM product design, testing, packaging, production, quality inspection, customer support, etc. He has 72 US patents and has published more than 30 papers in famous international periodicals.

Research interest: Spintronics, new memory, magnetic nanomaterials detection and so on.

 

【上一篇】:Presentation title: Key materials and technologies for Dye-Sensitized Solar Cells and all-weather solar cells

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