Group

One of the most important properties of Quantum Dots is the ability to tune their bandgap and therefore control their light absorbance and emission (from UV to IR region). Since quantum dots have narrow emission bandwidth (FWHM~30 nm), high colour-rendering index and broad colour gamut can be demonstrated. These great advantages make QDs excellent candidates for future optoelectronics.

Our research group is interested in synthesis of II-VI inorganic semiconductors quantum-dots (such as CdSe, CdS, CdSe_1-yS_y, Cd_1-xZn_xS, CdSe/ZnS, CdSe/CdS, CdSe/CdS/ZnS, ZnCdS/ZnS, and Zn_1-xCd_xSe/ZnSe/ZnSe_xS_1-x/ZnS etc.) and their use in quantum-dot-based light-emitting diodes.

We demonstrate full-color quantum-dot-based light-emitting diodes (QD-LEDs) with high efficiency and long lifetime by employing high quantum-yield core/shell QDs with thick shells. These results signify a remarkable progress in QD-LEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.

Up to date, there are 5 research projects which based on QD-LEDs are undertaken in our research group, including those from the National Natural Science Foundation of China (NSFC), Program for Science & Technology Innovation Talents in University of Henan Province. There are more than 60 academic papers from the group published in the international and domestic core journals.